ZXMN10A07FTC【PDF 3/7 页】MOSFET N-CHAN 100V SOT23-3

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A Product Line of

Diodes Incorporated

ZXMN10A07F

Electrical Characteristics (@T A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current T J = +25°C

Gate-Source Leakage

BV DSS

I DSS

I GSS

100

—

—

—

—

—

—

1.0

100

V

μA

nA

V GS = 0V, I D = 250 μ A

V DS = 100V, V GS = 0V

V GS = ±20V, V DS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 9)

Forward Transconductance (Notes 9 & 11)

Diodes Forward Voltage (Note 9)

V GS(th)

R DS (ON)

g fs

V SD

2

—

—

—

—

540

700

1.6

0.85

4

700

900

—

0.95

V

m ?

S

V

V DS = V GS , I D = 250 μ A

V GS = 10V, I D = 1.5A

V GS = 6V, I D = 1A

V DS = 15V, I D = 1A

T J = +25°C, I S = 1.5A, V GS = 0V

DYNAMIC CHARACTERISTICS

Input Capacitance (Notes 10 & 11)

Output Capacitance (Notes 10 & 11)

Reverse Transfer Capacitance (Notes 10 & 11)

Gate Resistance (Notes 10 & 11)

Total Gate Charge (Notes 10 & 11)

Gate-Source Charge (Notes 10 & 11)

Gate-Drain Charge (Notes 10 & 11)

Reverse Recovery Time (Note 11)

Reverse Recovery Charge (Note 11)

Turn-On Delay Time (Notes 10 & 11)

Turn-On Rise Time (Notes 10 & 11)

Turn-Off Delay Time (Notes 10 & 11)

Turn-Off Fall Time (Notes 10 & 11)

C iss

C oss

C rss

R g

Q g

Q gs

Q gd

t rr

Q rr

t D(on)

t r

t D(off)

t f

—

—

—

—

—

—

—

—

—

—

—

—

—

138

12

6

2

2.9

0.7

1

27

12

1.8

1.5

4.1

2.1

280

25

12

4

6

1.5

2

60

—

—

—

—

—

pF

?

nC

ns

nC

ns

V DS = 50V, V GS = 0V,

f = 1.0MHz

f = 1MHz, V GS = 0V, V DS = 0V

V GS = 10V, V DS = 50V,

I D = 1A

T J = +25°C, I F = 1.8A,

di/dt = 100A/μs

V GS = 10V, V DD = 50V,

R G = 6 ? , I D = 1A

Notes:

9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

10. Switching characteristics are independent of operating junction temperature.

11. For design aid only, not subject to production testing.

ZXMN10A07F

Document number: DS33564 Rev. 6 - 2

3 of 7

www.diodes.com

August 2012

? Diodes Incorporated

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